NoMIS Power Corporation joins a $2.5 million ARPA-E project to develop high-voltage SiC-based power electronics for HVDC applications. The project will utilize NoMIS's 3.3 kV SiC MOSFETs, including a new 25 mΩ device, aimed at enhancing efficiency in multiport multiterminal HVDC converters. The consortium includes various industry and research partners, focusing on expanding U.S. transmission capacity.
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